HM3-6514B-9 Overview
The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low power operation. On-chip latches are provided for addresses allowing efficient interfacing with microprocessor systems.
HM3-6514B-9 Key Features
- Low Power Standby
- 125µW Max
- Low Power Operation
- 35mW/MHz Max
- Data Retention
- at 2.0V Min
- TTL patible Input/Output
- mon Data Input/Output
- Three-State Output
- Standard JEDEC Pinout