HS-65647RH
Features
- 1.2 Micron Radiation Hardened SOS CMOS
- Total Dose 3 x 105 RAD (Si)
- Transient Upset >1 x 1011 RAD (Si)/s
- Single Event Upset < 1 x 10-12 Errors/Bit-Day
- Latch-up Free
- LET Threshold >250 MEV/mg/cm2
- Low Standby Supply Current 10m A (Max)
- Low Operating Supply Current 100m A (2MHz)
- Fast Access Time 50ns (Max), 35ns (Typ)
- High Output Drive Capability
- Gated Input Buffers (Gated by E2)
- Six Transistor Memory Cell
- Fully Static Design
- Asynchronous Operation
- CMOS Inputs
- 5V Single Power Supply
- Military Temperature Range -55o C to +125o C
- Industry Standard JEDEC Pinout
I/O0 INPUT DATA CIRCUIT I/O7 E2 AI COL COLUMN I/O COLUMN DECODER
E1 G W CONTROL CIRCUIT
TRUTH TABLE E1 X 1 0 0 0 E2 0 1 1 1 1 G X X 1 0 X W X X 1 1 0 MODE Low Power Standby Disabled Enabled Read Write
Description
The Intersil HS-65647RH is a fully asynchronous 8K x 8 radiation hardened static RAM. This RAM is fabricated using the Intersil 1.2 micron silicon-on-sapphire CMOS technology. This...
