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HS9-65647RH-Q Datasheet, Intersil Corporation

HS9-65647RH-Q Datasheet, Intersil Corporation

HS9-65647RH-Q

datasheet Download (Size : 110.84KB)

HS9-65647RH-Q Datasheet

HS9-65647RH-Q ram equivalent, radiation hardened 8k x 8 sos cmos static ram.

HS9-65647RH-Q

datasheet Download (Size : 110.84KB)

HS9-65647RH-Q Datasheet

Features and benefits


* 1.2 Micron Radiation Hardened SOS CMOS - Total Dose 3 x 105 RAD (Si) - Transient Upset >1 x 1011 RAD (Si)/s - Single Event Upset < 1 x 10-12 Errors/Bit-Day
* La.

Description

The Intersil HS-65647RH is a fully asynchronous 8K x 8 radiation hardened static RAM. This RAM is fabricated using the Intersil 1.2 micron silicon-on-sapphire CMOS technology. This technology gives exceptional hardness to all types of radiation, incl.

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TAGS

HS9-65647RH-Q
Radiation
Hardened
SOS
CMOS
Static
RAM
Intersil Corporation

Manufacturer


Intersil Corporation

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