* 1.2 Micron Radiation Hardened SOS CMOS - Total Dose 3 x 105 RAD (Si) - Transient Upset >1 x 1011 RAD (Si)/s - Single Event Upset < 1 x 10-12 Errors/Bit-Day
* La.

The Intersil HS-65647RH is a fully asynchronous 8K x 8 radiation hardened static RAM. This RAM is fabricated using the Intersil 1.2 micron silicon-on-sapphire CMOS technology. This technology gives exceptional hardness to all types of radiation, incl.

HS9-1254RH

HS9-1254RH-Q

HS9-139RH

HS9-139RH-8

HS9-139RH-Q

HS9-139RH-T

HS9-1410RH-Q

HS9-1825ARH

HS9-1825ARH-8

HS9-1825ARH-Q

HS9-1840ARH

HS9-1840ARH-8

HS9-1840ARH-Q