HUF75333G3 Overview
N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge.
HUF75333G3 Key Features
- 66A, 55V
- Simulation Models
- Temperature pensated PSPICE® and SABER© Models
- SPICE and SABER Thermal Impedance Models Available on the WEB at: .Intersil./families/models.htm
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- Related Literature
- TB334, “Guidelines for Soldering Surface Mount ponents to PC Boards”
