File Number 4571
6A, 250V, 0.600 Ohm, Rad Hard,
N-Channel Power MOSFET
The Discrete Products Operation of Intersil has developed a
series of Radiation Hardened MOSFETs speciﬁcally
designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects
(SEE), Single Event Gate Rupture (SEGR) in particular, is
combined with 100K RADS of total dose hardness to provide
devices which are ideally suited to harsh space environ-
ments. The dose rate and neutron tolerance necessary for
military applications have not been sacriﬁced.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings. Numer-
ous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
ﬁeld-effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications
exposed to radiation environments such as switching regula-
tion, switching converters, motor drives, relay drivers and
drivers for high-power bipolar switching transistors requiring
high speed and low gate drive power. This type can be oper-
ated directly from integrated circuits.
Also available at other radiation and screening levels. See us
on the web, Intersil’ home page: http://www.semi.inter-
sil.com. Contact your local Intersil Sales Office for additional
• 6A, 250V, rDS(ON) = 0.600Ω
• Total Dose
- Meets Pre-RAD Speciﬁcations to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with VDS up
to 80% of Rated Breakdown and VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 4.0nA Per-RAD(Si)/s Typically
- Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2
Die Family TA17638.
CAUTION: Beryllia Warning per MIL-S-19500
refer to package speciﬁcations.
4-1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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