RFV10N50BE Datasheet | Intersil

S E M I C O N D U C T O R 10A, 500V, Fast Switching N-Channel Enhancement-Mode Power MOSFETs Package JEDEC STYLE 5 LEAD TO-247 August 1995 Features - 10A, 500V - r DS(ON) = 0.480Ω - Very Fast Turn-Off Characteristics - Nanosecond Switching Speeds - Electrostatic Discharge Protected - UIS Rating Curve - SOA is Power Dissipation Limited - High Input Impedance Description The RFV10N50BE is an N-Channel fast switching MOSFET transistor that is designed for switching regulators, inverters and motor drivers. The RFV10N50BE is a monolithic structure incorporating a high voltage, high current MOSFET, a control MOSFET and ESD protection diodes. As indicated in the symbol to the right, the turn-on of the main MOSFET is controlled by Gate 1 (G1). The control MOSFET, controlled by Gate 2 (G2), is distributed throughout the structure. Gate 2 provides a very low impedance and inductive path to rapidly discharge the gate of the main MOSFET. Gate 2 affords very fast turn-off (typically less than 25ns) when desired. A separate return connection, Source Kelvin (SK), is supplied for the gate drive circuit to avoid voltage induced transients from the output circuit during switching. The RFV10N50BE can be operated directly from integrated circuits. PACKAGE AVAILABILITY PART NUMBER RFV10N50BE PACKAGE TO-247 BRAND V10N50BE Terminal Diagram G1 G2 NOTE: When ordering use the entire part number. Formerly developmental type...