INJ0203BC1
INJ0203BC1 is Silicon P-channel MOSFET manufactured by Isahaya Electronics Corporation.
Silicon P-channel MOSFET
DESCRIPTION
INJ0203BC1 is a Silicon P-channel MOSFET. This product is most suitable for use such as portable machinery, because of low voltage drive and low on resistance.
OUTLINE DRAWING
2.8 1.5
FEATURE
- Input impedance is high, and not necessary to consider a drive electric current.
- Drive voltage -2.5V
- Low on Resistance. RDS(on)=100mΩ(TYP).
- Small package for easy mounting.
① ②③
2.8 1.90 0.95 0.95
Unit：ｍｍ
1.1 0.8 0～0.1 0.13
APPLICATION
Switching
MAXIMUM RATINGS（Ta=25℃）
Symbol VDSS VGSS
ID IDP PD
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current(DC) Drain current(Pulse) ※1 Total Power Dissipation
Rating -20...
