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INJ0212AP1 - Silicon P-channel MOSFET

Description

INJ0210AP1 is a Silicon P-channel MOSFET.

This product is most suitable for use such as portable machinery, because of low voltage drive and low on resistance.

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Part number INJ0212AP1
Manufacturer Isahaya Electronics Corporation
File Size 210.70 KB
Description Silicon P-channel MOSFET
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INJ0212AP1 High Speed Switching Silicon P-channel MOSFET DESCRIPTION INJ0210AP1 is a Silicon P-channel MOSFET. This product is most suitable for use such as portable machinery, because of low voltage drive and low on resistance. OUTLINE DRAWING 4.4 1.6 UNIT：mm 1.5 1.0 2.4 FEATURE SDG MARKING Input impedance is high, and not necessary to consider a drive electric current. High drain current ID=-2.5A Vth is low, and drive by low voltage is possible. Vth=1.0～2.5V Low on Resistance. RDS(on)=95mΩ(TYP). High speed switching. APPLICATION 0.5 1.5 3.0 0.4 0.
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