INJ0212AP1
INJ0212AP1 is Silicon P-channel MOSFET manufactured by Isahaya Electronics Corporation.
High Speed Switching Silicon P-channel MOSFET
DESCRIPTION
INJ0210AP1 is a Silicon P-channel MOSFET. This product is most suitable for use such as portable machinery, because of low voltage drive and low on resistance.
OUTLINE DRAWING
4.4 1.6
UNIT：mm 1.5
1.0 2.4
FEATURE
MARKING
- Input impedance is high, and not necessary to consider a drive electric current.
- High drain current ID=-2.5A
- Vth is low, and drive by low voltage is possible. Vth=1.0～2.5V
- Low on Resistance. RDS(on)=95mΩ(TYP).
- High speed switching.
APPLICATION
0.5 1.5
TERMINAL CONNECTOR S：SOURCE D：DRAIN G：GATE
JEITA：SC-62 JEDEC：SOT-89
Switching
MAXIMUM RATING （Ta=25℃）
Symbol
Parameter...
