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RTBN14BAP1 - Transistor

General Description

with built-in bias transistor.

FEATURE Built-in bias resistor （R2=10kΩ） High collector current （IC=1A） Small package for easy mounting.

APPLICATION Switching.

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Full PDF Text Transcription for RTBN14BAP1 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for RTBN14BAP1. For precise diagrams, and layout, please refer to the original PDF.

PRELIMINARY Notice：This is not a final specification Some parametric are subject to change. DESCRIPTION RTBN14BAP1 is a one chip transistor with built-in bias transistor....

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ION RTBN14BAP1 is a one chip transistor with built-in bias transistor. FEATURE Built-in bias resistor （R2=10kΩ） High collector current （IC=1A） Small package for easy mounting. APPLICATION Switching. EQUAIVALENT CIRCUIT C B R1 R2 E 〈SMALL-SIGNAL TRANSISTOR〉 RTBN14BAP1 TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING UNIT：mm 4.6 MAX 1.6 1.5 0.8 MIN 2.5 4.2 MAX E CB 0.53 MAX 1.5 3.0 0.48 MAX 0.

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