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RTBN234AP1 - Transistor

General Description

with built-in bias transistor.

FEATURE Built-in bias resistor （R1=2.2kΩ,R2=10kΩ） High collector current （IC=1A） Small package for easy mounting.

APPLICATION Switching.

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Full PDF Text Transcription for RTBN234AP1 (Reference)

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PRELIMINARY Notice：This is not a final specification Some parametric are subject to change. DESCRIPTION RTBN234AP1 is a one chip transistor with built-in bias transistor....

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ION RTBN234AP1 is a one chip transistor with built-in bias transistor. FEATURE Built-in bias resistor （R1=2.2kΩ,R2=10kΩ） High collector current （IC=1A） Small package for easy mounting. APPLICATION Switching. EQUAIVALENT CIRCUIT C B R1 R2 E 〈SMALL-SIGNAL TRANSISTOR〉 RTBN234AP1 TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING UNIT：mm 4.6 MAX 1.6 1.5 0.8 MIN 2.5 4.2 MAX E CB 0.53 MAX 1.5 3.0 0.48 MAX 0.

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