datasheet4u.com

900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf





JCET
JCET

BSS138 Datasheet Preview

BSS138 Datasheet

N-Channel MOSFET

No Preview Available !

BSS138 pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
BSS138
V(BR)DSS
50 V
N-Channel 50-V(D-S) MOSFET
RDS(on)MAX
 3.5Ω@10V 
6Ω@4.5V  
ID
220mA
SOT-23
1. GATE
2. SOURCE
3. DRAIN
FEATURE
z High density cell design for extremely low RDS(on)
z Rugged and Relaible
APPLICATION
z Direct Logic-Level Interface: TTL/CMOS
z Drivers: Relays, Solenoids, Lamps, Hammers,Display,
Memories, Transistors, etc.
z Battery Operated Systems
z Solid-State Relays
MARKING
Equivalent Circuit
Maximum ratings (Ta=25unless otherwise noted)
Parameter
Drain-Source Voltage
Continuous Gate-Source Voltage
Continuous Drain Current
Power Dissipation
Thermal Resistance from Junction to Ambient
Operating Temperature
Storage Temperature
Symbol
VDS
VGSS
ID
PD
RθJA
Tj
Tstg
Value
50
±20
0.22
0.35
357
150
-55 ~+150
Unit
V
A
W
/W
www.cj-elec.com
1
D,Apr,2015



JCET
JCET

BSS138 Datasheet Preview

BSS138 Datasheet

N-Channel MOSFET

No Preview Available !

BSS138 pdf
MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 unless otherwise specified
Parameter
Symbol
Test Condition
Off characteristics
Drain-source breakdown voltage
Gate-body leakage
Zero gate voltage drain current
V(BR)DSS
IGSS
IDSS
VGS = 0V, ID =250µA
VDS =0V, VGS =±20V
VDS =50V, VGS =0V
VDS =30V, VGS =0V
On characteristics
Gate-threshold voltage (note 1)
Static drain-source on-resistance (note 1)
Forward transconductance (note 1)
VGS(th)
RDS(on)
gFS
VDS =VGS, ID =1mA
VGS =10V, ID =0.22A
VGS =4.5V, ID =0.22A
VDS =10V, ID =0.22A
Dynamic characteristics (note 2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VDS =25V,VGS =0V, f=1MHz
Switching characteristics
Turn-on delay time (note 1,2)
Rise time (note 1,2)
Turn-off delay time (note 1,2)
Fall time (note 1,2)
td(on)
tr
td(off)
tf
VDD=30V, VDS=10V,
ID =0.29A,RGEN=6
Drain-source body diode characteristics
Body diode forward voltage (note 1)
VSD
IS=0.44A, VGS = 0V
Notes:
1. Pulse Test ; Pulse Width 300µs, Duty Cycle 2%.
2. These parameters have no way to verify.
Min Typ Max Units
50 V
±100 nA
0.5 µA
100 nA
0.80 1.50 V
3.50
6
0.12 S
27
13 pF
6
5
18
ns
36
14
1.4 V
www.cj-elec.com
2
E,May,2015


Part Number BSS138
Description N-Channel MOSFET
Maker JCET
Total Page 5 Pages
PDF Download
BSS138 pdf
BSS138 Datasheet PDF
[partsNo] view html
View PDF for Mobile








Similar Datasheet

1 BSS131 SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) Siemens Semiconductor Group
Siemens Semiconductor Group
BSS131 pdf
2 BSS131 SIPMOS Small-Signal-Transistor Infineon Technologies AG
Infineon Technologies AG
BSS131 pdf
3 BSS131 SIPMOS Small-Signal-Transistor INFINEON
INFINEON
BSS131 pdf
4 BSS131 SIPMOS Small-Signal Transistor Siemens Semiconductor
Siemens Semiconductor
BSS131 pdf
5 BSS135 SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance) Siemens Semiconductor Group
Siemens Semiconductor Group
BSS135 pdf
6 BSS135 SIPMOS Small-Signal Transistor Siemens Semiconductor
Siemens Semiconductor
BSS135 pdf
7 BSS138 N-Channel MOSFET JCET
JCET
BSS138 pdf
8 BSS138 MOSFET Silikron Semiconductor
Silikron Semiconductor
BSS138 pdf
9 BSS138 N-Channel Power Mosfet GME
GME
BSS138 pdf





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy