Click to expand full text
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB3*2-8L-B Plastic-Encapsulate MOSFETS
CJ5903DC
V(BR)DSS
-20V
Dual P-Channel MOSFET
RDS(on)MAX
70 mΩ@-4.5V
90 mΩ@-2.5V 120 mΩ@-1.8V
ID
-4.5A
DFNWB3*2-8L-B
D1 D2
FEATURE Surface Mount Package TrenchFET Power MOSFET
MARKING
APPLICATION Load Swith,PA Switch and Battery Switch for Portable Devices and Game Consoles
Equivalent Circuit
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
* Repetitive rating : Pulse width limited by junction temperature.