Datasheet Details
| Part number | CJL3443 |
|---|---|
| Manufacturer | JCET |
| File Size | 279.50 KB |
| Description | P-Channel MOSFET |
| Download | CJL3443 Download (PDF) |
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| Part number | CJL3443 |
|---|---|
| Manufacturer | JCET |
| File Size | 279.50 KB |
| Description | P-Channel MOSFET |
| Download | CJL3443 Download (PDF) |
|
|
|
This P-Channel MOSFET is produced using advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
These devices have been designed to offer exceptional power dissipation In a very small footprint for applications where the larger packages are impractical.
D D G 1 6 2 5 3 4 MARKING: D D S R43 Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Continuous Gate-Source Voltage Continuous Drain Current Power Dissipation Thermal Resistance from Junction to Ambient Operating Temperature Storage Temperature Symbol VDS VGS ID PD RθJA Tj Tstg Value -20 ±8 -4 0.35 357 150 -55 ~+150 Unit V A W ℃/W ℃ A,Dec,2010 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Off characteristics Drain-source breakdown voltage Gate-body leakage Zero gate voltage drain current On characteristics Gate-threshold voltage Symbol V(BR)DSS IGSS IDSS VGS(th) Static drain-source on-resistance (note 1) RDS(on) Forward transconductance (note 1) gfs Dynamic characteristics (note 2) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Switching characteristics Turn-on delay time (note 1,2) td(on) Rise time (note 1,2) tr Turn-off delay time (note 1,2) td(off) Fall time (note 1,2) tf Drain-source body diode characteristics Body diode forward voltage (note 1) VSD No tes: 1.
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL3443 P-Channel 20-V(D-S) MOSFET FEATURE z Fast Switching Speed z Low Gate Charge z High Performance Trench Technology for extremely Low RDS(on) SOT-23-6L 1.
GATE 2.
DRAIN 3.
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