CJMPD08
Description
The CJMPD08 uses advanced trench technology and design to
Provide excellent RDS(on) with low gate charge. This device is suitable for use in DC-DC conversion applications.
FEATURE z Low Profile for Easy Fit in Thin Environments z Bidirectional Current Folw with mon Source Configuration
APPLICATIONS z Optimized for Battery and Load Management Applications in Portable Equipment z Li-Ion Battery Charging and Protection Circuits z High Power Management in Portable , Battery Powered Products z High Side Load Switch
MARKING:
Equivalent Circuit front back
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation Thermal Resistance from Junction to Ambient Storage Temperature Junction Temperature
.cj-elec.
Symbol VDS VGS ID PD RθJA Tj Tstg
Value -12 ±8 - 0.7 178 150 -55 ~+150
Unit V A W ℃/W ℃
F,June,2016
MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 ℃ unless otherwise specified
Parameter...
