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JCET
JCET

CJND2007 Datasheet Preview

CJND2007 Datasheet

Dual N-Channel MOSFET

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CJND2007 pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB5×2-6L-A Plastic-Encapsulate MOSFETS
CJND2007
V(BR)DSS
20V
 
Dual N-Channel MOSFET
RDS(on)MAX
 20mΩ@10V
22mΩ @4.5V
24 mΩ@3.8V
26mΩ@2.5V
35mΩ@1.8V
ID
 
7A
 
DFNWB5×2-6L-A
DESCRIPTION
The CJND2007 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. It is ESD protected. This device is
suitable for use as a uni-directional or bi-directional load switch,facilitated
by its common-drain configuration.
MARKING:
Equivalent Circuit
MAXIMUM RATINGS (Ta=25unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Thermal Resistance from Junction to Ambient(note1)
Thermal Resistance from Junction to Ambient(note2)
Junction Temperature
Storage Temperature
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
*Repetitive ratingPluse width limited by junction temperature.
Note1.When mounted on a minimum pad.
2.When mounted on 1 in2of 2oz copper board.
www.cj-elec.com
1
Symbol
VDS
VGS
ID
IDM *
RθJA
Tj
Tstg
TL
Value
20
±12
7
30
175
70
150
-55~+150
260
Unit
V
V
A
A
/W
/W
C,May,2015



JCET
JCET

CJND2007 Datasheet Preview

CJND2007 Datasheet

Dual N-Channel MOSFET

No Preview Available !

CJND2007 pdf
MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 Я unless otherwise specified
Parameter
Symbol
Test Condition
STATIC PARAMETERS
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage (note 1)
Drain-source on-resistance (note 1)
Forward tranconductance (note 1)
Diode forward voltage(note 1)
DYNAMIC PARAMETERS (note 2)
V (BR) DSS
IDSS
IGSS
VGS(th)
RDS(on)
gFS
VSD
VGS = 0V, ID =250µA
VDS =16V,VGS = 0V
VGS =±4.5V, VDS = 0V
VGS =±8V, VDS = 0V
VDS =VGS, ID =250µA
VGS =10V, ID =7A
VGS =4.5V, ID =6.6A
VGS =3.8V, ID =6A
VGS =2.5V, ID =5.5A
VGS =1.8V, ID =5A
VDS =5V, ID =7A
IS=1A, VGS = 0V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate charge
Gate-source charge
Gate-drain charge
SWITCHING PARAMETERS(note 2)
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Ciss
Coss
Crss
Qg
Qgs
Qgd
VDS =10V,VGS =0V,f =1MHz
VDS =10V,VGS =4.5V,ID =7A
td(on)
tr
td(off)
tf
VGS=5V,VDD=10V,
RL=1.35,RGEN=3
Notes :
1. Pulse Test : Pulse width300µs, duty cycle0.5%.
2. Guaranteed by design, not subject to production testing.
Min Typ Max Unit
20 V
1 µA
±1 µA
±10 µA
0.4 1 V
20 m
22 m
24 m
26 m
35 m
9S
1V
1150
185
145
15
0.8
3.2
pF
pF
pF
nC
nC
nC
6 ns
13 ns
52 ns
16 ns
www.cj-elec.com
2
C,May,2015


Part Number CJND2007
Description Dual N-Channel MOSFET
Maker JCET
Total Page 5 Pages
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CJND2007 pdf
CJND2007 Datasheet PDF
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