JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-263-2L Plastic-Encapsulate Diodes
MBRB10150CT-B SCHOTTKY BARRIER RECTIFIER
FEATURES
Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Low Power Loss,High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
TO-263-2L
1. ANODE
2. CATHODE
3. ANODE
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
VRRM
Peak repetitive reverse voltage
VRWM
Working peak reverse voltage
VR(RMS)
IO
IFSM
PD
RΘJA
Tj
Tstg
RMS reverse voltage
Average rectified output current
Non-Repetitive peak forward surge current
8.3ms half sine wave
Power dissipation
Thermal resistance from junction to ambient
Junction temperature
Storage temperature
Value
150
105
10
120
2
50
125
-55~+150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Reverse voltage
V(BR)
IR=0.1mA
Reverse current
IR VR=150V
Forward voltage
IF=5A
VF
IF=10A
Typical total capacitance
Ctot VR=4V,f=1MHz
Min
150
Unit
V
V
A
A
W
℃/W
℃
℃
Typ Max Unit
V
0.05 mA
0.9 V
1V
70 pF
www.cj-elec.com
1
A-2,Mar,2016
