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2SC4618 Datasheet Preview

2SC4618 Datasheet

NPN Transistor

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2SC4618 pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate Transistors
2SC4618 TRANSISTOR (NPN)
FEATURES
High Voltage and Current
High DC Current Gain
Complementary to 2SC4738
Small Package
APPLICATIONS
General Purpose Amplification
MAXIMUM RATINGS (Ta=25unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
40
VCEO Collector-Emitter Voltage
25
VEBO Emitter-Base Voltage
5
IC Collector Current
50
PC Collector Power Dissipation
150
RΘJA Thermal Resistance From Junction To Ambient
833
Tj Junction Temperature
150
Tstg Storage Temperature
-55+150
Unit
V
V
V
mA
mW
/W
SOT523
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Test conditions
IC=50µA, IE=0
IC=1mA, IB=0
IE=50µA, IC=0
VCB=24V, IE=0
VEB=3V, IC=0
VCE=6V, IC=1mA
IC=10mA, IB=1mA
VCE=6V,IC=1mA , f=100MHz
VCB=6V, IE=0, f=1MHz
Min Typ Max Unit
40 V
25 V
5V
500 nA
500 nA
56 270
0.3 V
150 MHz
2.2 pF
CLASSIFICATION OF hFE
RANK
RANGE
MARKING
N
56120
AN
P
82180
AP
Q
120270
AQ
A,Oct,2010


Part Number 2SC4618
Description NPN Transistor
Maker JCST
Total Page 1 Pages
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