JCST CJ2310
The CJ2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a battery protection or in other switching application.| Part No. | CJ2310 |
|---|---|
| Datasheet | CJ2310 Download |
| Manufacturer |  JCST |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
SOT-23 1. GATE 2. SOURCE 3. DRAIN FEATURE● High power and current handing capability
● Lead free product is acquired
● Surface mount package MARKING APPLICATION
● Battery Switch
● DC/DC Converter Equivalent Circuit Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (note 1) Power Dissipation Thermal Resistance from Junction to Ambient (note 2) Operation Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD RθJA TJ,TSTG Value 60 ±20 3 10 0.35 357 -55~+150 Unit V V A A W ℃/W ℃ 1 Rev. - 2.0 MOSFET
ELECTRICAL CHARACTERISTICS
Ta=25 ℃ unless otherwise specified Parameter Symbol Test Condition STATIC CHARACTERISTICS Drain-source breakdown voltage V (BR)DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =60V,VGS = 0V Gate-body leakage current IGSS VGS =±20V, VDS = 0V Gate threshold voltage (note 3) VGS(th) VDS =VGS, ID =250µA Drain-source on-resistance (note 3) RDS...
