JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Diodes
MBR20125CT SCHOTTKY BARRIER RECTIFIER
FEATURES
z Schottky Barrier Chip
z Guard Ring Die Construction for Transient Protection
z Low Power Loss,High Efficiency
z High Surge Capability
z High Current Capability and Low Forward Voltage Drop
z For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
TO-220-3L
1. ANODE
2. CATHODE
3. ANODE
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
Average rectified output current@ Tc=125℃
Non-Repetitive peak forward surge current
8.3ms half sine wave
PD
RΘJA
Tj
Tstg
Power dissipation
Thermal resistance from junction to ambient
Junction temperature
Storage temperature
Value
125
87.5
20
120
2
50
125
-55~+150
Unit
V
V
A
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max Unit
Reverse voltage
V(BR)
IR=100μA
125 V
Reverse current
IR VR=125V
9 μA
Forward voltage
VF IF=10A
0.87 V
A,Nov,2010
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