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JCST

MBRD10200CT Datasheet Preview

MBRD10200CT Datasheet

SCHOTTKY BARRIER RECTIFIER

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate Diodes
MBRD10200CT SCHOTTKY BARRIER RECTIFIER
FEATURES
z Schottky Barrier Chip
z Guard Ring Die Construction for Transient Protection
z Low Power Loss,High Efficiency
z High Surge Capability
z High Current Capability and Low Forward Voltage Drop
z For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
TO-25522-2L
1. ANODE
2. CATHODE
3. ANODE
MAXIMUM RATINGS ( Ta=25unless otherwise noted )
Symbol
Parameter
VRRM
VRWM
VR(RMS)
IO
IFSM
Peak repetitive reverse voltage
Working peak reverse voltage
RMS reverse voltage
Average rectified output current
Non-repetitive peak forward surge current
8.3ms half sine wave
PD
RΘJA
Tj
Tstg
Power dissipation
Thermal resistance from junction to ambient
Junction temperature
Storage temperature
Value
200
140
10
125
1.25
80
125
-55~+150
Unit
V
V
A
A
W
/W
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Symbol
Test conditions
Reverse voltage
V(BR)
IR=100μA
Reverse current
IR VR=200V
Forward voltage
VF(1)
VF(2)*
IF=5A
IF=10A
Typical total capacitance
Ctot VR=4V,f=1MHz
*Pulse test
Min
200
Typ Max
50
0.92
1.1
50
Unit
V
μA
V
V
pF
A-3,Mar,2014




JCST

MBRD10200CT Datasheet Preview

MBRD10200CT Datasheet

SCHOTTKY BARRIER RECTIFIER

No Preview Available !

Typical Characteristics MBRD10200CT
Forward Characteristics
10000
1000
100
10
1
0 100 200 300 400 500 600 700 800 900 1000
FORWARD VOLTAGE V (mV)
F
Reverse Characteristics
1000
100
T =100
a
10
1
T =25
a
0.1
0.01
1 25 50 75 100 125 150 175 200
REVERSE VOLTAGE V (V)
R
Capacitance Characteristics
200
T =25
a
f=1MHz
150
100
50
0
0 5 10 15 20 25 30 35
REVERSE VOLTAGE V (V)
R
Power Derating Curve
2.5
2.0
1.5
1.0
0.5
0.0
0
25 50 75 100
AMBIENT TEMPERATURE T ()
a
125
A-3,Mar,2014


Part Number MBRD10200CT
Description SCHOTTKY BARRIER RECTIFIER
Maker JCST
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MBRD10200CT Datasheet PDF






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