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JCST

MBRD20100CT Datasheet Preview

MBRD20100CT Datasheet

SCHOTTKY BARRIER RECTIFIER

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate Diodes
MBRD20100CT SCHOTTKY BARRIER RECTIFIER
FEATURES
z Schottky Barrier Chip
z Guard Ring Die Construction for Transient Protection
z Low Power Loss,High Efficiency
z High Surge Capability
z High Current Capability and Low Forward Voltage Drop
z For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
TO-252-2L
1. ANODE
2. CATHODE
3. ANODE
MAXIMUM RATINGS ( Ta=25unless otherwise noted )
Symbol
Parameter
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
Average rectified output current@ Tc=125
Non-Repetitive peak forward surge current
8.3ms half sine wave
PD
RΘJA
Tj
Tstg
Power dissipation
Thermal resistance from junction to ambient
Junction temperature
Storage temperature
Value
100
70
20
120
1.25
80
125
-55~+150
Unit
V
V
A
A
W
/W
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max Unit
Reverse voltage
Reverse current
V(BR)
IR
IR=1mA
VR=100V
9
100
VV
0.1 mA
Forward voltage
VF1 IF1=10A
1V
Forward voltage
VF2*
IF2=20A
1.2 V
*Pulse test
A,Apr,2014




JCST

MBRD20100CT Datasheet Preview

MBRD20100CT Datasheet

SCHOTTKY BARRIER RECTIFIER

No Preview Available !

Typical Characteristics MBRD20100CT
20000
10000
1000
100
Forward Characteristics
Reverse Characteristics
1000
100 Ta=100
10
10
1
0 100 200 300 400 500 600 700 800 900 1000
FORWARD VOLTAGE VF (mV)
1
0.1
1
Ta=25
20 40 60 80
REVERSE VOLTAGE VR (V)
100
Capacitance Characteristics
Power Derating Curve
400 2.0
Ta=25
f=1MHz
300 1.5
200 1.0
100 0.5
0
0 5 10 15 20 25 30 35
REVERSE VOLTAGE VR (V)
0.0
0
25 50 75 100
AMBIENT TEMPERATURE Ta ()
125
A,Apr,2014


Part Number MBRD20100CT
Description SCHOTTKY BARRIER RECTIFIER
Maker JCST
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