JCST TIP29
NPN Transistor
FEATURES
z Designed for Use in General Purpose Amplifier and SwitchingAPPLICATIONS
TO – 126 1. BASE 2. COLLECTOR 3. EMITTERMAXIMUM RATINGS
(Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC ICP PC RθJA Tj Tstg Parameter Collector-Base Voltage TIP29 TIP29A TIP29B TIP29C Collector-Emitter Voltage TIP29 TIP29A TIP29B TIP29C Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 40 60 80 100 40 60 80 100 5 1 3 1.25 100 150 -55~+150 Unit V V V A A W ℃/W ℃ ℃ELECTRICAL CHARACTERISTICS
(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC=100µA,IE=0 TIP29 TIP29A TIP29B TIP29C Collector-emitter breakdown voltage V(BR)CEO IC=30mA