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JILIN SINO-MICROELECTRONICS

JCS12N60FT Datasheet Preview

JCS12N60FT Datasheet

N-CHANNEL MOSFET

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N 沟道增强型场效应晶体管
R N-CHANNEL MOSFET
JCS12N60CT/FT
主要参数 MAIN CHARACTERISTICS
封装 Package
ID 12 A
VDSS 600 V
Rdson(@Vgs=10V) 0.65
Qg 39nC
用途
z 高频开关电源
z 电子镇流器
z UPS 电源
APPLICATIONS
z High efficiency switch
mode power supplies
z Electronic lamp ballasts
based on half bridge
z UPS
产品特性
z低栅极电荷
zCrss (典型值 23pF)
z开关速度快
z产品全部经过雪崩测试
z高抗 dv/dt 能力
zRoHS 产品
FEATURES
zLow gate charge
zLow Crss (typical 23pF )
zFast switching
z100% avalanche tested
zImproved dv/dt capability
zRoHS product
订货信息 ORDER MESSAGE
订货型号
Order codes
印记
Marking
JCS12N60CT-O-C-N-B JCS12N60CT
JCS12N60FT-O-F-N-B JCS12N60FT
封装
Package
TO-220C
TO-220MF
无卤素
Halogen
Free
NO
NO
包装
Packaging
条管 Tube
条管 Tube
器件重量
Device
Weight
2.15 g(typ)
2.20 g(typ)
版本:200911A
1/10




JILIN SINO-MICROELECTRONICS

JCS12N60FT Datasheet Preview

JCS12N60FT Datasheet

N-CHANNEL MOSFET

No Preview Available !

R
绝对最大额定值 ABSOLUTE RATINGS (Tc=25)
JCS12N60CT/FT
项目
Parameter
符号
Symbol
数值
Value
JCS12N60CT JCS12N60FT
最高漏极-源极直流电压
Drain-Source Voltage
VDSS
600 600
连续漏极电流
Drain Current -continuous
ID
T=25
T=100
12
7.6
12*
7.6*
最大脉冲漏极电流(注 1
Drain Current - pulse
note 1
IDM
48 48*
最高栅源电压
Gate-Source Voltage
VGSS
±30
单脉冲雪崩能量(注 2
Single Pulsed Avalanche Energynote 2
EAS
880
雪崩电流(注 1
Avalanche Currentnote 1
IAR
12
重复雪崩能量(注 1
Repetitive Avalanche Currentnote 1
EAR
25
二极管反向恢复最大电压变化速率(注 3
Peak Diode Recovery dv/dtnote 3
dv/dt
4.5
耗散功率
Power Dissipation
PD
TC=25
-Derate
above
250
2.0
51
0.41
25
最高结温及存储温度
Operating and Storage Temperature
Range
TJTSTG
55+150
引线最高焊接温度
Maximum Lead Temperature for
Soldering Purposes
TL
300
*漏极电流由最高结温限制
*Drain current limited by maximum junction temperature
单位
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
版本:200911A
2/10


Part Number JCS12N60FT
Description N-CHANNEL MOSFET
Maker JILIN SINO-MICROELECTRONICS
Total Page 9 Pages
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