JCS4N60SB
Key Features
- Low gate charge
- Low Crss (typical 2.69pF )
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- V 击穿电压温度特性 ΔBVDSS/Δ ID=250μA, referenced to Breakdown Voltage Temperature
- 0.65 - Coefficient TJ 25℃ V/℃ 零栅压下漏极漏电流 IDSS Zero Gate Voltage Drain Current VDS=600V,VGS=0V, TC=25℃ VDS=480V, TC=125℃
- 100 μA 正向栅极体漏电流 Gate-body leakage current, forward IGSSF VDS=0V, VGS =30V
- 100 nA 反向栅极体漏电流 Gate-body leakage current, reverse IGSSR VDS=0V, VGS =-30V
- 1.7 2.4 Ω 正向跨导 gfs
