JCS4N65B Overview
R N 沟道增强型场效应晶体管 N-CHANNEL MOSFET JCS4N65B 主要参数 MAIN CHARACTERISTICS 封装 Package ID VDSS Rdson （@Vgs=10V） Qg 用途 z 高频开关电源 z 电子镇流器 z UPS 电源 4.0 A 6R 0 V 2.R Ω 13.3nC APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS.
JCS4N65B Key Features
- continuous
- 55～+150
- 漏极电流由最高结温限制 -Drain current limited by maximum junction temperature
- 100 nA
- 1.8 2.5