• Part: JCS50N06RH
  • Manufacturer: JILIN SINO-MICROELECTRONICS
  • Size: 1.57 MB
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JCS50N06RH datasheet preview
JCS50N06RH page 2
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JCS50N06RH Key Features

  • Low gate charge -Low Crss -Fast switching -100% avalanche tested -Improved dv/dt capability -RoHS product
  • pulse（note 1）
  • 漏极电流由最高结温限制 -Drain current limited by maximum junction temperature
  • VDS=48V, TC=125℃
  • VDS=0V, VGS =30V
  • 100 nA
  • 100 nA
  • 19 23 mΩ
  • 900 1125 pF
  • 430 540 pF

Related JILIN SINO-MICROELECTRONICS Datasheets

Part Number Description
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JCS50N06H N-CHANNEL MOSFET
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JCS50N06RH Description

N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET JCS50N06H 主要参数 MAIN CHARACTERISTICS 封装 Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ 50 A 60 V 23 mΩ 34 nC 用途 高频开关电源 UPS 电源 APPLICATIONS High frequency switch mode power supplies UPS 产品特性 低栅极电荷 低 Crss 开关速度快 产品全部经过雪崩测试 高抗 dv/dt 能力 RoHS.