JCS7N80CH Overview
N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET JCS7N80H 主要参数MAIN CHARACTERISTICS 封装 Package ID VDSS Rdson-max （Vgs=10V） Qg-Typ 7A 800V 1.6Ω 39nC 用途 高频开关电源 电子镇流器 LED 电源 APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge LED power supplies 产品特性 低栅极电荷 开关速度快 产品全部经过雪崩测试 高抗 dv/dt 能力 RoHS.
JCS7N80CH Key Features
- Low gate charge -Fast switching -100% avalanche tested -Improved dv/dt capability -RoHS product
- pulse（note 1）IDM
- Derate above
- 漏极电流由最高结温限制 -Drain current limited by maximum junction temperature
- VDS=0V, VGS =30V
- 100 μA
- 100 nA
- 100 nA
- 1.3 1.6 Ω
