JCS80N70SF Key Features
- Low gate charge -Low Crss -Fast switching -100% avalanche tested -Improved dv/dt capability -RoHS product
- pulse(note 1)
- 漏极电流由最高结温限制
- Drain current limited by maximum junction temperature
- VDSB B=0V, VGSB B =20V
- 100 nA
- 100 nA
- 7.4 8.5 mΩ