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3DD5024P - CASE-RATED BIPOLAR TRANSISTOR

General Description

of Changes ：201412A 5/5

Key Features

  • z 3DD5024PNPN z 3DD5024P is high breakdown ， voltage of NPN bipolar ： transistor. The main process of 、 manufacture:high voltage planar , process,triple diffused process 。（RoHS）。 etc. ,adoption of fully plastic packge. RoHS product.

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Datasheet Details

Part number 3DD5024P
Manufacturer JILIN SINO
File Size 223.52 KB
Description CASE-RATED BIPOLAR TRANSISTOR
Datasheet download datasheet 3DD5024P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CASE-RATED BIPOLAR TRANSISTOR 3DD5024P FOR LOW FREQUENCY AMPLIFICATION R 3DD5024P MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 1500V 8.0 A 3.0V(max) 1.0 μs(max) Package TO-220HF z APPLICATIONS z Horizontal deflection output for color TV. 123 FEATURES z 3DD5024PNPN z 3DD5024P is high breakdown ， voltage of NPN bipolar ： transistor.The main process of 、 manufacture:high voltage planar , process,triple diffused process 。（RoHS）。 etc.,adoption of fully plastic packge.RoHS product. EQUIVALENT CIRCUIT RBE=50Ω(Typ.