Datasheet Summary
N 沟绝缘栅双极晶体管 N-CHANNEL IGBT
主要参数 MAIN CHARACTERISTICS
IC VCES Vcesat-typ
75A 650V 1.65V
封装 Package
用途
- 充电桩
- UPS 电源
- 光伏
APPLICATIONS
- Charging pile
- UPS
- Solar converters
采用发射极载流子增强技术，优化 IGBT 导通饱和压降和关断损 耗性能。 The emitter carrier enhancement technology is adopted to optimize the on saturation voltage drop and turn-off energy promise performance of IGBT.
产品特性
- 低栅极电荷
- Trench FS 技术,
- RoHS 产品
- 快开关速度
- 低开关损耗
- VCE(sat)正温度系数
Features
- Low gate charge
- Trench FS Technology,
- RoHS product
- Fast switching speed
- Low switching losses
- VCE(sat) with positive temperature coefficient
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