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JINAN JINGHENG

LL4448 Datasheet Preview

LL4448 Datasheet

SMALL SIGNAL SWITCHING DIODE

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R
SEMICONDUCTOR
LL4448
SMALL SIGNAL SWITCHING DIODE
FEATURES
Silicon epitaxial planar diode
Fast switching diode
500mW power dissipation
This diode is also available in the DO-35 case with the type
designation 1N4448
MECHANICAL DATA
Case: MinMELF glass case(SOD- 80)
Weight: Approx. 0.05gram
MiniMelf
JF
0.063(1.6)
0.055(1.4)
0.142(3.6)
0.134(3.4)
0.019(0.48)
0.011(0.28)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified)
DC Blocking Voltage
Non-Repetitive Peak Reverse Voltage
Average rectified current, Half wave rectification with
Resistive load at TA=25°C and f 50Hz
Non-Repetitive Peack Forward Surge Current @t=1.0s
Power dissipation at TA=25°C
Junction temperature
Storage temperature range
ELECTRICAL CHARACTERISTICS
Symbol
VR
VRM
IAV
IFSM
Ptot
TJ
TSTG
Value
75
100
150
500
500
175
-65 to +175
(Ratings at 25 C ambient temperature unless otherwise specified)
Forward voltage
at IF=5mA
at IF=100mA
Leakage current
at VR=20V
at VR=75V
at VR=20V , TJ=150°C
Junction capacitance at VR=VF=0V
Reverse breakdown voltage tested with 100mA puse
Reverse recovery time from IF=10mA to IR=1mA,
VR=6V, RL=100W
Thermal resistance junction to ambient
Rectification efficiency at f=100MHz, VRF=2V
Symbol
VF
VF
IR
IR
IR
CJ
V(BR)R
trr
R JA
Min.
0.62
100
0.45
Typ.
Max
0.72
1
25
5
50
4
4
500
Units
Volts
Volts
mA
mA
mW
C
C
Units
V
V
nA
mA
mA
pF
V
ns
K/W
JINAN JINGHENG ELECTRONICS CO., LTD.
11-22
HTTP://WWW.JINGHENGGROUP.COM




JINAN JINGHENG

LL4448 Datasheet Preview

LL4448 Datasheet

SMALL SIGNAL SWITCHING DIODE

No Preview Available !

RATINGS AND CHARACTERISTIC CURVES LL4448
FIG 1-FORWARD CHARACTERISTICS
mA
10 3
10 2
IF
10
TJ=100°C TJ=25°C
1
10-1
10-2
0
1 2V
VF
FIG 3-ADMISSIBLE POWER DISSIPATION
VERSUS AMBIENT TEMPERATURE
mW
1000
900
800
700
Ptot
600
500
400
300
200
100
0
0
100
TA
200 C
FIG 2: DYNAMIC FORWARD RESISTANCE
VERSUS FORWARD CURRENT
W
10 4
10 3
rF
10 2
TJ=25 C
f=1KHz
10
1
10 -2
10 -1
1 10
IF
102 mA
FIG. 4-RELATIVE CAPACITANCE VERSUS
VOLTAGE
1.5
Cj(VR) 1.3
Cj(0V)
1.1
TJ=25 C
f=1MHz
0.9
0.7
0 2 4 6 8 10V
VR
JINAN JINGHENG ELECTRONICS CO., LTD.
11-23
HTTP://WWW.JINGHENGGROUP.COM


Part Number LL4448
Description SMALL SIGNAL SWITCHING DIODE
Maker JINAN JINGHENG
Total Page 3 Pages
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