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SC0806 - SILICON CARBIDE SCHOTTKY DIODE

General Description

SIC Schottky Diode has no switching loss,provides improved system efficiency against Si diodes by utilizing new semiconductor material-Silicon Carbide,enables higher operating frequency, and helps increasing power density and reduction of system size /cost.Its high reliability ensures robust operati

Key Features

  • Max Junction Temperature 175°C High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery.

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Datasheet Details

Part number SC0806
Manufacturer JINAN JINGHENG
File Size 60.81 KB
Description SILICON CARBIDE SCHOTTKY DIODE
Datasheet download datasheet SC0806 Datasheet

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R SEMICONDUCTOR SC0806 SILICON CARBIDE SCHOTTKY DIODE Reverse Voltage - 600 Volts Forward Current - 8.0Amperes DESCRIPTION SIC Schottky Diode has no switching loss,provides improved system efficiency against Si diodes by utilizing new semiconductor material-Silicon Carbide,enables higher operating frequency, and helps increasing power density and reduction of system size /cost.Its high reliability ensures robust operation during surge or over-voltage conditions.