HP10N60 Description
Pulse width limited by maximum junction temperature 2. L=10.56mH, IAS=9.5A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤9.5A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C.
- Part: HP10N60
- Manufacturer: JINGJIAZHEN
- Size: 1.67 MB
HP10N60 is 600V N-Channel MOSFET manufactured by JINGJIAZHEN.
Pulse width limited by maximum junction temperature 2. L=10.56mH, IAS=9.5A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤9.5A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C.