HU830 Overview
Pulse width limited by maximum junction temperature 2. L=21.5mH, IAS=4.5A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤5.0A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C.
Datasheet Details
| Part number | HU830 |
|---|---|
| Datasheet | HU830 HD8 Datasheet (PDF) |
| File Size | 1.77 MB |
| Manufacturer | JINGJIAZHEN |
| Description | 500V N-Channel MOSFET |
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