HU830 Description
Pulse width limited by maximum junction temperature 2. L=21.5mH, IAS=4.5A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤5.0A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C.
- Part: HU830
- Manufacturer: JINGJIAZHEN
- Size: 1.77 MB
HU830 is 500V N-Channel MOSFET manufactured by JINGJIAZHEN.
Pulse width limited by maximum junction temperature 2. L=21.5mH, IAS=4.5A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤5.0A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C.