13001S8D
13001S8D is NPN Transistor manufactured by JTD.
FEATURES
TO-92 Plastic-Encapsulate Transistors
TRANSISTOR(NPN)
Power switching applications
TO-92
LIMMITING VALUES(Tj=25℃ Unless Otherwise Stated)
Parameter
Symbol Value
Unit
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
Ic
Total Power Dissipattion
Pc
Storage Temperature
Tstg -65~150
℃
Junction Temperature
Tj
℃
1. EMITTER 2. COLLECTOR 3. BASE
ELECTRICAL CHARACTERISTICS （Tj=25℃ Unless Otherwise Stated）
Parameter
Symbol
Test conditions
Min
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector- Emitter Cutoff Current Emitter-Base Cutoff Current DC Current Gain Collector- Emitter Saturation Voltage Base- Emitter Saturation Voltage
BVCBO BVCEO BVEBO ICBO ICEO IEBO h FE VCE(sat) VBE(sat)
Ic=0.5m...
