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JTD

13001S8D Datasheet Preview

13001S8D Datasheet

NPN Transistor

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SHENZHEN JTD ELECTRONICS CO.,LTD
13001S8D
FEATURES
TO-92 Plastic-Encapsulate Transistors
TRANSISTOR(NPN)
Power switching applications
TO-92
LIMMITING VALUES(Tj=25Unless Otherwise Stated)
Parameter
Symbol Value
Unit
Collector-Base Voltage
VCBO
600
V
Collector-Emitter Voltage
VCEO
400
V
Emitter-Base Voltage
VEBO
7
V
Collector Current
Ic
0.5
A
Total Power Dissipattion
Pc
0.65
W
Storage Temperature
Tstg -65~150
Junction Temperature
Tj
150
1. EMITTER
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS Tj=25Unless Otherwise Stated
Parameter
Symbol
Test conditions
Min
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector- Emitter Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
Collector- Emitter Saturation Voltage
Base- Emitter Saturation Voltage
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
Ic=0.5mA,Ie=0
600
Ic=10mA,Ib=0
400
Ie=1mA,Ic=0
7
Vcb=600V,Ie=0
Vce=400V,Ib=0
Veb=7V,Ic=0
Vce=20V,Ic=20mA
10
Ic=200mA,Ib=100mA
Ic=200mA,Ib=100mA
Storage Time
Ts
Ic=0.1mA, (UI9600)
Falling Time
fT
VCE =20V,Ic=20mA
f=1MHZ
CLASSIFICATION OF Hfe(1)
Range
10-15
15-20
20-25
Max Unit
V
V
V
100 μA
20 μA
100 μA
40
0.6 V
1.2 V
2 μS
0.8 μS
30-35
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Part Number 13001S8D
Description NPN Transistor
Maker JTD
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13001S8D Datasheet PDF






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