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2SD2150 - NPN Transistor

Features

  • Power dissipation : 0.5 W Tamb=25 PCM Collector current ICM : 3 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range TJ Tstg: -55 to +150.

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Datasheet preview – 2SD2150

Datasheet Details

Part number 2SD2150
Manufacturer Jiangsu Changjiang Electronics
File Size 76.64 KB
Description NPN Transistor
Datasheet download datasheet 2SD2150 Datasheet
Additional preview pages of the 2SD2150 datasheet.

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Full PDF Text Transcription

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www.DataSheet.co.kr JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SD2150 SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 TRANSISTOR NPN FEATURES Power dissipation : 0.
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