A733LT1 Datasheet | Jiangsu Changjiang Electronics

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors Features Power dissipation PCM : 0.2 W£¨ Tamb=25¡æ£© Collector current ICM : -0.15 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ Unit : mm TRANSISTOR£¨PNP £© SOT¡ª 23 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡æ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage .. unless Test otherwise MIN -60 -50 -5 specified£© TYP MAX UNIT V V V -0.1 -0.1 ¦Ì A ¦Ì A Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO HFE£¨ 1£© VCE(sat) conditions Ic= -5 ¦Ì A £¬IE=0 IC= -1 m A , IB=0 IE= -50 ¦Ì A£¬IC=0 VCB= -60 V , IE=0 VEB= -5 V , IC=0 Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage VCE= -6 V, IC= -1m A IC= -100m A, IB=- 10m A VCE= -6 V, IC=-10m A 120 -0.18 475 -0.3 V Transition frequency f MHz f = 30MHz CLASSIFICATION OF HFE(1) Rank Range L 120-200 H 200-475 MARKING SOT-23 PACKAGE OUTLINE DIMENSIONS D...