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AO3407 Datasheet Preview

AO3407 Datasheet

30V P-Channel MOSFET

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30V P-Channel Enhancement Mode MOSFET
VDS= -30V
RDS(ON), Vgs@-10V, Ids@ 4.1A < 64.5m
RDS(ON), Vgs@-4.5V, Ids@-3.0A < 87m
AO3407
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
D
SOT-23-3L
GS
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.65 2.95
1.50 1.70
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
1.90
1.00
0.10
0.40
0.85
Max.
REF.
1.30
0.20
-
1.15
0° 10°
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS -30
VGS ± 20
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
TA = 25oC
TA = 75oC
ID
IDM
PD
5.3
-20
1.4
1
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
Junction-to-Ambient Thermal Resistance (PCB mounted)
RθJA
125
Unit
V
A
W
oC
oC/W
JinYu
semiconductor
www.htsemi.com




JinYu

AO3407 Datasheet Preview

AO3407 Datasheet

30V P-Channel MOSFET

No Preview Available !

30V P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
BVDSS
RDS(on)
RDS(on)
VGS = 0V, ID = -250uA
VGS = -10V, ID = -4.1A
VGS = -4.5V, ID = -3A
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
VGS(th)
IDSS
IGSS
gfs
VDS =VGS, ID = -250uA
VDS = -24V, VGS = 0V
VGS = ± 20V, VDS = 0V
VDS = -5V, ID = -4 A
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS = -15V , ID =-5.3A
VGS = -10V
VDD =-15V, RL=15
ID = -1 A, VGEN = -10 V
RG = 6
VDS = -15 V, VGS = 0V
f = 1.0 MHz
Source-Drain Diode
Max. Diode Forward Current
IS
Diode Forward Voltage
VSD IS = 2.6A, VGS = 0V
Note: Pulse test: pulse width <= 300us, duty cycle<= 2%
Min.
-30
-1.0
5.5
AO3407
Typ. Miax. Unit
V
48.0 64.5
64.0 87.0 m
-1 -3.0
V
-1 uA
± 100 nA
S
9.35
3.43
1.7
10.8
2.33
22.53
3.87
551.57
90.96
60.79
nC
ns
pF
-2.6 A
-1.3 V
JinYu
semiconductor
www.htsemi.com


Part Number AO3407
Description 30V P-Channel MOSFET
Maker JinYu
PDF Download

AO3407 Datasheet PDF





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