* High voltage capability Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．PACKAGE 1 VD TO-220 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VAL
13003AD
Jingdao
116.09 KB
Bipolar junction transistor.
R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. 13003AD Bipolar Junction Transistor Si NPN RoHS COMPLIANT 1．APPLICATION Fluorescen.
📁 Related Datasheet
13003ADA NPN SILICON TRANSISTOR (Unisonic Technologies)
13003ADG NPN SILICON TRANSISTOR (Unisonic Technologies)
13003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR (STMicroelectronics)
13003 NPN Epitaxial Silicon Transistor (Elite Enterprises)
13003 HIGH VOLTAGE AND HIGH SPEED SWITCH (HSiN)
13003BDG NPN SILICON TRANSISTOR (Unisonic Technologies)
13003BR MJE13003BR (ETC)
13003BS NPN SILICON TRANSISTOR (Unisonic Technologies)
13003CDH NPN SILICON TRANSISTOR (Unisonic Technologies)
13003DE NPN SILICON TRANSISTOR (Unisonic Technologies)
