* Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．PACKAGE 1 VD TO-220 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE UNIT Collector-Base
13009SDL Datasheet (121.57 KB)
13009SDL
Jingdao
121.57 KB
Bipolar junction transistor.
R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. 13009SDL Bipolar Junction Transistor Si NPN RoHS COMPLIANT 1．APPLICATION Mainly u.
📁 Related Datasheet
13009 PNP power transistor (Jingdao)
13009 NPN power transistor (STMicroelectronics)
13009H NPN power transistor (STMicroelectronics)
13009L KSE13009L (Fairchild Semiconductor)
13009L NPN power transistor (STMicroelectronics)
1300 Crystal Clock Oscillators (Nihon Dempa Kogyo)
1300-102-4xx 2.54mm IDC Connector (Methode Electronics)
13001 NPN Epitaxial Silicon Transistor (Elite)
13001-2 NPN power transistor (Jingdao)
13001-A NPN power transistor (Jingdao)
