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◆Si NPN ◆RoHS COMPLIANT
BU102S
Bipolar Junction Transistor
ShenZhen Jingdao Electronic Co.,Ltd.
1．APPLICATION
Fluorescent Lamp、Charger and Switch-mode power supplies
2．FEATURES
High voltage capability Features of good high temperature High switching speed
3．PACKAGE
TO-92T
4．Electrical Characteristics
4.1 Absolute Maximum Ratings
Tamb= 25℃ unless specified
1 Base(B) 2 Collector(C) 3 Emitter(E)
PARAMETER Collector-Base Voltage Collector-Emittor Voltage Emittor- Base Voltage Collector Current Ta=25℃ Power Dissipation Tc=25℃ Junction Temperature Storage Temperature
SYMBOL VCBO VCEO VEBO IC Ptot Tj Tstg
VALUE 700 400 9 1.0 0.8 11 150 -55～150
UNIT V V V A W ℃ ℃
4.
BU102S Datasheet
