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Jingdao

P13009 Datasheet Preview

P13009 Datasheet

Bipolar Junction Transistor

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R
www.jdsemi.cn
深圳市晶导电子有限公司
ShenZhen Jingdao Electronic Co.,Ltd.
P13009
Bipolar Junction Transistor
Si NPN
RoHS COMPLIANT
1.APPLICATION
Fluorescent LampElectronic Ballast
Computer Switch Power Supply
2.FEATURES
High voltage capability
Features of good high temperature
High switching speed
3.PACKAGE
1
2
3
TO-3PB
4.Electrical Characteristics
4.1 Absolute Maximum Ratings
1 Base(B) 2 Collector(C) 3 Emitter(E)
Tamb= 25unless specified
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emittor Voltage
Emittor- Base Voltage
Collector Current
Power Dissipation
Ta=25
Tc=25
Junction Temperature
Storage Temperature
4.2 Electrical Parameter
Tamb= 25unless specified
PARAMETER
SYMBOL
Collector-Base Voltage
Collector-Emittor Voltage
Emittor-Base Voltage
Collector-Base Cutoff Current
Collector-Emittor Cutoff Current
Emittor-Base Cutoff Current
DC Current Gain
Collector-Emittor Saturation Voltage
Base-Emittor Saturation Voltage
Rising Time
Falling Time
Storage Time
Typical Frequency
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
hFE*
VCE
*
sat
VBE
*
sat
tr
tf
ts
fT
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
700
400
9
12
3
120
150
-55150
V
V
V
A
W
TEST CONDITION
IC=1mAIE=0
IC=1mAIB=0
IE=1mAIC=0
VCB=700V, IE=0
VCE=400V, IB=0
VEB=9V, IC=0
VCE=5V, IC=1mA
VCE=5V, IC=3A
IC=8A, IB=4A
IC=8A, IB=4A
IC=500mA (UI9600)
VCE=10V,IC=0.5A,
f=1MHz
VALUE
MIN TYP MAX
700
400
9
10
20
10
8
15 40
0.8
1.4
0.4
0.10 0.4
4.0 7.0
UNIT
V
V
V
μA
μA
μA
V
V
μs
μs
μs
4 MHz
*: Pulse test tp300μs,δ≤2%
Add1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C
Tel0755-29799516 Fax0755-29799515
1 2013




Jingdao

P13009 Datasheet Preview

P13009 Datasheet

Bipolar Junction Transistor

No Preview Available !

R
www.jdsemi.cn
深圳市晶导电子有限公司
ShenZhen Jingdao Electronic Co.,Ltd.
5. Characteristic Curve
Fig1 SOADC
20
10 Ta=25
125
100
P13009
Bipolar Junction Transistor
Fig2 PtotT
Ptot-Tc
1
0.1
1 10 100 1000
VCE (V)
Fig3 Static Characteristic
10
IB=500mA
Ta=25
75
50
25
Ptot-Ta
0
0 50 100
T ()
Fig4 hFE-IC
150
Ta=25
5
IB=100mA
IB=50mA
00 5
VCE (V)
Fig5 VCEsat-IC
Ta=25
IC/IB=2
1
0.1
10
VCE=5V
1
10 3mA 0.01 0.1 1 10 30
IC (A)
Fig6 VBEsat-IC
Ta=25
IC/IB=2
1.0
0.01
0.1
1 10
Ic (A)
50
0.5
0.1
1 10
Ic (A)
50
Add1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C
Tel0755-29799516 Fax0755-29799515
2 2013


Part Number P13009
Description Bipolar Junction Transistor
Maker Jingdao
PDF Download

P13009 Datasheet PDF






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