H13003D - Bipolar Junction Transistor

Features

High voltage capability Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．.

Jingdao Electronic

Datasheet Details

Part number	H13003D
Manufacturer	Jingdao Electronic
File Size	115.05 KB
Description	Bipolar Junction Transistor
Datasheet	H13003D Datasheet

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Full PDF Text Transcription

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R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. H13003D Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1．APPLICATION Fluorescent Lamp、Electronic Ballast、 and Switch-mode power supplies 2．FEATURES High voltage capability Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．PACKAGE 1 VD TO-126D 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emittor Voltage Emittor- Base Voltage Collector Current Power Dissipation Ta=25℃ Tc=25℃ Junction Temperature Storage Temperature 4.

Published: Mar 18, 2020 |