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H13003D Bipolar Junction Transistor

H13003D Description

R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd.H13003D Bipolar Junction Transistor *Si NPN *RoHS COMPLIANT 1．APPLICATION Fluorescen.

H13003D Features

* High voltage capability Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．PACKAGE 1 VD TO-126D 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VA

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Datasheet Details

Part number
H13003D
Manufacturer
Jingdao Electronic
File Size
115.05 KB
Datasheet
H13003D-JingdaoElectronic.pdf
Description
Bipolar Junction Transistor

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Bipolar Junction Transistor Jingdao Electronic
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