* High voltage capability Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．PACKAGE 1 VD TO-126D 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VA
H13003D
Jingdao Electronic
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Bipolar junction transistor.
R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. H13003D Bipolar Junction Transistor Si NPN RoHS COMPLIANT 1．APPLICATION Fluorescen.
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