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Jingdao Microelectronics

SS312BF Datasheet Preview

SS312BF Datasheet

Surface Mount Schottky Barrier Rectifier

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山东晶导微电子有限公司
Jingdao Microelectronics
Surface Mount Schottky Barrier Rectifier
Reverse Voltage - 20 to 200V
Forward Current - 3.0A
FEATURES
• Metal silicon junction, majority carrier conduction
• For surface mounted applications
• Low power loss, high efficiency
• High forward surge current capability
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
MECHANICAL DATA
• Case: SMBF
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 57mg / 0.002oz
SS32BF THRU SS320BF
PINNING
PIN DESCRIPTION
1 Cathode
2 Anode
12
Simplified outline SMBF and symbol
Absolute Maximum Ratings and Electrical characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,
for capacitive load, derate by 20 %
Parameter
Symbols
SS32BF SS34BF SS36BF SS38BF SS310BF SS312BF SS315BF SS320BF Units
Maximum Repetitive Peak Reverse Voltage
VRRM
20
40
60
80 100 120 150 200
V
Maximum RMS voltage
VRMS 14 28
42
56 70
84 105 140
V
Maximum DC Blocking Voltage
VDC 20 40 60 80 100 120 150 200 V
Maximum Average Forward Rectified Current
Peak Forward Surge Current,8.3ms
Single Half Sine-wave Superimposed
on Rated Load (JEDEC method)
Max Instantaneous Forward Voltage at 3 A
Maximum DC Reverse Current Ta = 25°C
at Rated DC Reverse Voltage Ta =100°C
Typical Junction Capacitance1
Typical Thermal Resistance2
Operating Junction Temperature Range
I F ( AV )
IFSM
VF
IR
Cj
RθJA
Tj
0.55
0.5
5
450
3.0
80
0.70
0.85
0.3
3
400
65
-55 ~ +125
0.95
A
A
V
mA
pF
°C/W
°C
Storage Temperature Range
Tstg
-55 ~ +150
°C
1Measured at 1 MHz and applied reverse voltage of 4 V D.C
2P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
2017.01
SMBF-S-SS32BF~SS320BF-3A200V
Page 1 of 3




Jingdao Microelectronics

SS312BF Datasheet Preview

SS312BF Datasheet

Surface Mount Schottky Barrier Rectifier

No Preview Available !

山东晶导微电子有限公司
Jingdao Microelectronics
Fig.1 Forward Current Derating Curve
3.5
3.0
2.4
1.8
1.2
0.6
0.0
25 50 75 100 125 150
Case Temperature (°C)
Fig.3 Typical Forward Characteristic
20
10
1.0 SS32BF/SS34BF
SS36BF/SS38BF
SS310BF/SS312BF
SS315BF/SS320BF
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Instaneous Forward Voltage (V)
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
90
80
70
60
50
40
30 8.3 ms Single Half Sine Wave
(JEDEC Method)
20
1 10
Number of Cycles at 60Hz
100
SS32BF THRU SS320BF
Fig.2 Typical Reverse Characteristics
10 4
10 3
10 2
TJ=100°C
TJ=75°C
101
TJ=25°C
SS32BF/SS36BF
SS38BF-SS320BF
10 0
0
20 40 60 80 100
Percent of Rated Peak Reverse Voltage(%)
Fig.4 Typical Junction Capacitance
1000
500
200
100
TJ=25°C
20
10
0.1
SS32BF~SS36BF
SS38BF~SS320BF
1 10 100
Reverse Voltage (V)
Fig.6- Typical Transient Thermal Impedance
100
10
1
0.01
0.1 1
10
t, Pulse Durationsec
100
2017.01
www.sdjingdao.com
Page 2 of 3


Part Number SS312BF
Description Surface Mount Schottky Barrier Rectifier
Maker Jingdao Microelectronics
Total Page 3 Pages
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