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Jingdao Microelectronics

SS510 Datasheet Preview

SS510 Datasheet

Surface Mount Schottky Barrier Rectifier

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山东晶导微电子有限公司
Jingdao Microelectronics
Surface Mount Schottky Barrier Rectifier
Reverse Voltage - 20 to 200 V
Forward Current - 5.0A
Features
• Metal silicon junction, majority carrier conduction
• For surface mounted applications
• Low power loss, high efficiency
• High forward surge current capability
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
MECHANICAL DATA
• Case: SMA
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 60mg / 0.0021oz
SS52 THRU SS520
PINNING
PIN DESCRIPTION
1 Cathode
2 Anode
12
Top View
Marking Code: SS52~SS520
Simplified outline SMA and symbol
Absolute Maximum Ratings and Electrical characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,
for capacitive load, derate by 20 %
Parameter
Symbols SS52
SS54
SS56
SS58 SS510 SS512 SS515 SS520 Units
Maximum Repetitive Peak Reverse Voltage
VRRM
20
40
60
80 100 120 150 200 V
Maximum RMS voltage
VRMS
14
28
42
56
70
84 105 140 V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current,8.3ms
Single Half Sine-wave Superimposed
on Rated Load (JEDEC method)
Max Instantaneous Forward Voltage at 5 A
VDC
I F ( AV )
IFSM
VF
20 40
0.55
60 80 100 120 150 200 V
5.0 A
150 A
0.70
0.85
V
Maximum DC Reverse Current Ta = 25°C
at Rated DC Reverse Voltage Ta =100°C
Typical Junction Capacitance1
Typical Thermal Resistance 2
Operating Junction Temperature Range
IR
Cj
RθJA
Tj
500
1.0
50
300
60
-55 ~ +150
mA
pF
°C/W
°C
Storage Temperature Range
Tstg
-55 ~ +150
°C
1Measured at 1 MHz and applied reverse voltage of 4 V D.C
2P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
2016.11
SMA-S-SS52~SS520-5A200V
Page 1 of 3




Jingdao Microelectronics

SS510 Datasheet Preview

SS510 Datasheet

Surface Mount Schottky Barrier Rectifier

No Preview Available !

山东晶导微电子有限公司
Jingdao Microelectronics
Fig.1 Forward Current Derating Curve
6.0
5.0
4.0
3.0
2.0
1.0
Single phase half-wave 60 Hz
resistive or inductive load
0.0
25 50 75 100
125
Case Temperature (°C)
150
Fig.3 Typical Forward Characteristic
20
10
1
0.1
0
SS52/SS54
SS56/SS58
SS510/SS520
0.5 1.0 1.5
Instaneous Forward Voltage (V)
2.0
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
200
175
150
125
100
75
50
25 8.3 ms Single Half Sine Wave
(JEDEC Method)
00
1 10
Number of Cycles at 60Hz
100
SS52 THRU SS520
Fig.2 Typical Reverse Characteristics
10 4
10 3
TJ=100°C
10 2
TJ=75°C
101
TJ=25°C
10 0
0
20 40 60 80 100
Percent of Rated Peak Reverse Voltage(%)
Fig.4 Typical Junction Capacitance
1000
500
TJ=25°C
100
20
10
0.1
SS52/SS54
SS56~SS520
1 10
Reverse Voltage (V)
100
Fig.6- Typical Transient Thermal Impedance
100
10
1
0.01
0.1 1
10
t, Pulse Durationsec
100
2016.11
www.sdjingdao.com
Page 2 of 3


Part Number SS510
Description Surface Mount Schottky Barrier Rectifier
Maker Jingdao Microelectronics
Total Page 3 Pages
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