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Jingdao Microelectronics

SS515F Datasheet Preview

SS515F Datasheet

Surface Mount Schottky Barrier Rectifier

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山东晶导微电子有限公司
Jingdao Microelectronics
Surface Mount Schottky Barrier Rectifier
Reverse Voltage - 20 to 200V
Forward Current - 5.0A
FEATURES
Metal silicon junction, majority carrier conduction
• For surface mounted applications
• Low power loss, high efficiency
• High forward surge current capability
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
MECHANICAL DATA
Case: SMAF
Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 27mg / 0.00095oz
SS52F THRU SS520F
PINNING
PIN DESCRIPTION
1 Cathode
2 Anode
12
Top View
Marking Code: SS52 — SS520
Simplified outline SMAF and symbol
Absolute Maximum Ratings and Electrical characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,
for capacitive load, derate by 20 %
Parameter
Symbols SS52F SS54F SS56F SS58F SS510F SS512F SS515F SS520F Units
Maximum Repetitive Peak Reverse Voltage
VRRM
20
40
Maximum RMS voltage
VRMS
14
28
Maximum DC Blocking Voltage
VDC 20
40
Maximum Average Forward Rectified Current
Peak Forward Surge Current,8.3ms
Single Half Sine-wave Superimposed
on Rated Load (JEDEC method)
Max Instantaneous Forward Voltage at 5 A
I F ( AV )
IFSM
VF 0.45 0.55
Maximum DC Reverse Current Ta = 25°C
at Rated DC Reverse Voltage Ta =100°C
Typical Junction Capacitance 1
Typical Thermal Resistance 2
Operating Junction Temperature Range
IR
Cj
RθJA
Tj
800
Storage Temperature Range
Tstg
60 80 100 120 150 200 V
42 56 70 84 105 140 V
60 80 100 120 150 200 V
5.0 A
150 A
0.70
0.85
1.0
50
500
45
-55 ~ +125
-55 ~ +150
V
mA
pF
°C/W
°C
°C
1Measured at 1MHz and applied reverse voltage of 4 V D.C.
2P.C.B. mounted with 0.5 X 0.5" (12.7 X 12.7 mm) copper pad areas.
2015.03
SMAF-S-SS520F-5A200V
Page 1 of 3




Jingdao Microelectronics

SS515F Datasheet Preview

SS515F Datasheet

Surface Mount Schottky Barrier Rectifier

No Preview Available !

山东晶导微电子有限公司
Jingdao Microelectronics
Fig.1 Forward Current Derating Curve
6.0
100LFM
5.0
4.0
3.0
2.0
1.0
Single phase half wave resistive
or inductive P.C.B mounted on
0.5×0.5"(12.7×12.7mm) pad areas
0.0
25 50 75 100
125
Lead Temperature (°C)
150
Fig.3 Typical Forward Characteristic
20
10
1
0.1
0
SS52F
SS54F
SS56F/SS58F
SS510F/SS520F
0.5 1.0 1.5
Instaneous Forward Voltage (V)
2.0
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
175
150
125
100
75
50
25 8.3 ms Single Half Sine Wave
(JEDEC Method)
00
1 10
Number of Cycles at 60Hz
100
SS52F THRU SS520F
Fig.2 Typical Reverse Characteristics
10 4
10 3
TJ=100°C
10 2
TJ=75°C
101
TJ=25°C
10 0
0
20 40 60 80 100
Percent of Rated Peak Reverse Voltage(%)
Fig.4 Typical Junction Capacitance
1000
500
TJ=25°C
100
20
10
0.1
SS52F/SS54F
SS546F/-SSSS552200FF
1 10
Reverse Voltage (V)
100
Fig.6- Typical Transient Thermal Impedance
100
10
1
0.01
0.1 1
10
t, Pulse Durationsec
100
2015.03
www.sdjingdao.com
Page 2 of 3


Part Number SS515F
Description Surface Mount Schottky Barrier Rectifier
Maker Jingdao Microelectronics
Total Page 3 Pages
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