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Jingdao Microelectronics

SS520C Datasheet Preview

SS520C Datasheet

Surface Mount Schottky Barrier Rectifier

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山东晶导微电子有限公司
Jingdao Microelectronics
Surface Mount Schottky Barrier Rectifier
Reverse Voltage - 20 to 200V
Forward Current - 5.0A
FEATURES
Metal silicon junction, majority carrier conduction
• For surface mounted applications
• Low power loss, high efficiency
• High forward surge current capability
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
MECHANICAL DATA
• Case: SMC
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.22g / 0.0077oz
SS52C THRU SS520C
PINNING
PIN DESCRIPTION
1 Cathode
2 Anode
12
Top View
Marking Code: SS52 ~ SS520
Simplified outline SMC and symbol
Absolute Maximum Ratings and Electrical characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,
for capacitive load, derate by 20 %
Parameter
Symbols SS52C SS54C SS56C SS58C SS510C SS512C SS515C SS520C Units
Maximum Repetitive Peak Reverse Voltage
VRRM
20
40
60
80 100 120 150 200 V
Maximum RMS voltage
VRMS
14
28
42
56
70
84 105 140 V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current,8.3ms
Single Half Sine-wave Superimposed
on Rated Load (JEDEC method)
Max Instantaneous Forward Voltage at 5 A
VDC 20 40 60 80 100
I F ( AV )
5.0
IFSM 175
VF 0.45 0.55
0.70
120 150
150
0.85
200
V
A
A
V
Maximum DC Reverse Current Ta = 25°C
at Rated DC Reverse Voltage Ta =100°C
Typical Junction Capacitance 1
Typical Thermal Resistance 2
Operating Junction Temperature Range
IR
Cj
RθJA
Tj
600
1.0
50
400
35
-55 ~ +150
mA
pF
°C/W
°C
Storage Temperature Range
Tstg
-55 ~ +150
°C
1Measured at 1 MHz and applied reverse voltage of 4 V D.C
2P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
2017.01
SMC-S-SS52C~SS520C-5A200V
Page 1 of 3




Jingdao Microelectronics

SS520C Datasheet Preview

SS520C Datasheet

Surface Mount Schottky Barrier Rectifier

No Preview Available !

山东晶导微电子有限公司
Jingdao Microelectronics
Fig.1 Forward Current Derating Curve
6.0
5.0
4.0
3.0
2.0
1.0
0.0
25 50 75 100 125 150
Case Temperature (°C)
Fig.3 Typical Forward Characteristic
20
10
1
0.1
0
SS52C
SS54C
SS56C/SS58C
SS510C/SS520C
0.5 1.0 1.5
Instaneous Forward Voltage (V)
2.0
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
180
175
SS52C~SS58C
SS510C~SS520C
150
125
100
75
50
25 8.3 ms Single Half Sine Wave
(JEDEC Method)
00
1 10
100
Number of Cycles at 60Hz
SS52C THRU SS520C
Fig.2 Typical Reverse Characteristics
10 4
10 3
TJ=100°C
10 2
TJ=75°C
101
TJ=25°C
10 0
0
20 40 60 80 100
Percent of Rated Peak Reverse Voltage(%)
Fig.4 Typical Junction Capacitance
1000
500
TJ=25°C
100
20
10
0.1
SS52C/SS54C
SS546FC/~SSSS552200FC
1 10
Reverse Voltage (V)
100
Fig.6- Typical Transient Thermal Impedance
100
10
1
0.01
0.1 1
10
t, Pulse Durationsec
100
2017.01
www.sdjingdao.com
Page 2 of 3


Part Number SS520C
Description Surface Mount Schottky Barrier Rectifier
Maker Jingdao Microelectronics
Total Page 3 Pages
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