KT1151 Datasheet - K-Line

Microwave Low Noise SiGe Heterojunction Bipolar Transistor

KT1151 Features

* h Operation Voltage: 10 V h Operating Temperature:

* 55℃ to +85℃ h Low Noise figure and High Gain NF=1.0dB (Typ), Ga=12dB (Typ) @VCE=10V,IC=7mA,f=1GHz h High Power Gain Gmax=14dB (Typ) @VCE=10V,IC=20mA,f=1GHz h Cost Effective 3-lead SOT23, 3-lead SOT323, 4- lead SOT143 package types Applica

KT1151 General Description

The KT1151 is a SiGe NPN HBT (Heterojunction bipolar transistor) designed for low noise high gain amplifier at CATV, UHF and VHF band. It has advantages such as low noise figure, high power gain, high voltage, broad dynamic range and good linearity. It can be applied in low noise high gain amplifier.

KT1151 Datasheet (500.56 KB)

KT1151 Datasheet Preview — Preview of KT1151 PDF

Datasheet Details

Part number:

KT1151

Manufacturer:

K-Line

File Size:

500.56 KB

Description:

Microwave low noise sige heterojunction bipolar transistor.

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KT1151 Microwave Low Noise SiGe Heterojunction Bipolar Transistor K-Line

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KT1151 Features

KT1151 General Description

Datasheet Details

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