KT1151 Datasheet Microwave Low Noise Sige Heterojunction Bipolar Transistor

Manufacturer: K-Line

Overview: Microwave Low Noise SiGe HBT KT1151 Spring 2012 KT1151 Microwave Low Noise SiGe Heterojunction Bipolar.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	KT1151
Manufacturer	K-Line
File Size	500.56 KB
Description	Microwave Low Noise SiGe Heterojunction Bipolar Transistor
Datasheet	KT1151 KT1151-K Datasheet (PDF)

The KT1151 is a SiGe NPN HBT (Heterojunction bipolar transistor) designed for low noise high gain amplifier at CATV, UHF and VHF band.

It has advantages such as low noise figure, high power gain, high voltage, broad dynamic range and good linearity.

It can be applied in low noise high gain amplifier.

h Operation Voltage: 10 V h Operating Temperature:.
55℃ to +85℃ h Low Noise figure and High Gain NF=1.0dB (Typ), Ga=12dB (Typ) @VCE=10V,IC=7mA,f=1GHz h High Power Gain Gmax=14dB (Typ) @VCE=10V,IC=20mA,f=1GHz h Cost Effective 3-lead SOT23, 3-lead SOT323, 4- lead SOT143 package types.

Part Number	Description