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KX105 Datasheet - KCB

GaN HEMT Transistor

KX105 Features

* High Small Signal Gain: 15 dB @ 4 GHz.

* High Output Power: 15W PSAT.

* High Breakdown Voltage, Efficiency and Temperature Operation. APPLICATIONS

* Microwave Radios

* Military Radios

* VSAT

* Telecom Infrastructure

* Test Equipment

KX105 General Description

The KX105 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) transistor in a Surface‐Mount Technology (SMT) package for high reliability applications. This transistor offers superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher satur.

KX105 Datasheet (494.25 KB)

Preview of KX105 PDF

Datasheet Details

Part number:

KX105

Manufacturer:

KCB

File Size:

494.25 KB

Description:

Gan hemt transistor.

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TAGS

KX105 GaN HEMT Transistor KCB

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