| Title | |
| Description | The KX105 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) transistor in a Surface‐Mount Technology (SMT) package for high reliability applications. This transistor offers superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density... |
| Features |
High Small Signal Gain: 15 dB @ 4 GHz. High Output Power: 15W PSAT. High Breakdown Voltage, Efficiency and Temperature
Operation.
APPLICATIONS
Microwave Radios Military Radios VSAT Telecom Infrastructure Test Equipment
ELECTRICAL CHARACTERISTICS (‐40 to 85°C)
Parameter
Symbol
Conditions
Min Typical Max Units
Small Signal Gain
...
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| Datasheet |
 KX105 Datasheet - 494.25KB |
| Distributor |
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| Stock | In stock |
| Price | |
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