KX105
KX105 is GaN HEMT Transistor manufactured by KCB.
DESCRIPTION
The KX105 is a gallium nitride (Ga N) High Electron Mobility Transistor (HEMT) transistor in a Surface‐Mount Technology (SMT) package for high reliability applications. This transistor offers superior properties pared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. Ga N HEMTs offer greater power density and wider bandwidths pared to Si and Ga As transistors.
FEATURES
- High Small Signal Gain: 15 d B @ 4 GHz.
- High Output Power: 15W PSAT.
- High Breakdown Voltage, Efficiency and Temperature
Operation.
APPLICATIONS
- Microwave Radios
- Military Radios
- VSAT
- Tele Infrastructure
- Test Equipment
ELECTRICAL CHARACTERISTICS (‐40 to 85°C)
Parameter
Symbol
Conditions
Min Typical Max Units
Small Signal Gain
Saturated Power Output1 PSAT
Drain Efficiency2
Output Mismatch Stress
VSWR
1. PSAT is defined as IG = 0.4 m A. 2. Drain Efficiency = POUT/PDC.
VDD = 28 V, IDQ = 100 m A
VDS = 28 V, IDQ = 100 m A
VDS = 28 V, IDQ = 100 m A, PSAT = 15 W
VDS = 28 V, IDQ = 100 m A, POUT = 15 W CW
15 d B
%
10:1
KCB Solutions, LLC 900 Mount Laurel, Shirley, MA 01464
Office: (978) 425-0400 info@kcbsolutions. ww.kcbsolutions. KX105DS REV (‐)
KX105 | Ga N HEMT Transistor, 15 W, 6.0 GHz
OPERATING CHARACTERISTICS (‐40 TO +85C)1
Parameter...
